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Change of interfacial properties and trap density in amorphous InGaZnO thin film transistor depending on different rf power of sputtering

Authors

Kim, Bo Seul; Kim Do Hyung; Lee Sang Yeol

Citation

7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics

URI

https://pubs.kist.re.kr/handle/201004/97959

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KIST Conference Paper > Others

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