리간드 치환반응 기반의 전하주입 조절 특성을 갖는 양자점 발광다이오드 소자

Author
배완기조진한김희숙정승준조익준
Assignee
한국과학기술연구원
Regitration Date
2021-01-12
Registration No.
10,892,433
Application Date
2017-06-20
Application No.
15/612768
Country
US
URI
https://pubs.kist.re.kr/handle/201004/98089
Appears in Collections:
KIST Patent > 2017
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