DSpace at KISTKIST Patent2017

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dc.contributor.author배완기-
dc.contributor.author조진한-
dc.contributor.author김희숙-
dc.contributor.author정승준-
dc.contributor.author조익준-
dc.date.accessioned2024-01-12T22:30:27Z-
dc.date.available2024-01-12T22:30:27Z-
dc.date.issued2021-01-12-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/98089-
dc.title리간드 치환반응 기반의 전하주입 조절 특성을 갖는 양자점 발광다이오드 소자-
dc.typePatent-
dc.date.registration2021-01-12-
dc.date.application2017-06-20-
dc.identifier.patentRegistrationNumber10,892,433-
dc.identifier.patentApplicationNumber15/612768-
dc.publisher.countryUS-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2017
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