| 2013-10-25 | Decay dynamics and exciton localization in large GaAs quantum dots grown by droplet epitaxy | Tighineanu, P.; Daveau, R.; Lee, E. H.; Song, J. D.; Stobbe, S.; Lodahl, P. |
| 2013-05-07 | Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer | An, C. S.; Jang, Y. D.; Lee, H.; Lee, D.; Song, J. D.; Choi, W. J. |
| 2018-07-20 | Deterministic coupling of epitaxial semiconductor quantum dots to hyperbolic metamaterial | Jang, Y. D.; Baek, J. S.; Devaraj, V.; Kim, M. D.; Song, J. D.; Wang, Y.; Zhang, X.; Lee, D. |
| 2014-02-25 | Dielectric function and critical points of AlP determined by spectroscopic ellipsometry | Hwang, S. Y.; Kim, T. J.; Jung, Y. W.; Barange, N. S.; Park, H. G.; Kim, J. Y.; Kang, Y. R.; Kim, Y. D.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C. |
| 2010-09-13 | Dielectric functions and interband transitions of In1-xAlxSb alloys | Yoon, J. J.; Kim, T. J.; Jung, Y. W.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D. |
| 2014-09 | Dielectric functions and interband transitions of InxAl1 (-) P-x alloys | Kim, T. J.; Hwang, S. Y.; Byun, J. S.; Aspnes, D. E.; Lee, E. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Park, H. G.; Choi, J.; Kim, J. Y.; Kang, Y. R.; Park, J. C.; Kim, Y. D. |
| 2011-09-01 | Dielectric response of AlP by in-situ ellipsometry | Jung, Y. W.; Byun, J. S.; Hwang, S. Y.; Kim, Y. D.; Shin, S. H.; Song, J. D. |
| 2009-06-08 | Dielectric response of AlSb from 0.7 to 5.0 eV determined by in situ ellipsometry | Jung, Y. W.; Ghong, T. H.; Byun, J. S.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Shin, S. H.; Song, J. D. |
| 2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
| 2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
| 2014-04 | Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar Cell | Park, M. H.; Kim, H. S.; Park, S. J.; Song, J. D.; Kim, S. H.; Lee, Y. J.; Choi, W. J.; Park, J. H. |
| 2011-05 | Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer | Kim, S. Y.; Song, J. D.; Kim, T. W. |
| 2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
| 2007-07-15 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode | Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H. |
| 2014-08 | Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum Dots | Kim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W. |
| 2012-07 | Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions | Kim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W. |
| 2008-11 | Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures | Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G. |
| 2012-11 | Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wells | Kim, D. H.; You, J. H.; Kim, T. W.; Song, J. D.; Yoo, K. H.; Kim, S. Y. |
| 2014-02-03 | Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors | Weng, Q. C.; An, Z. H.; Zhu, Z. Q.; Song, J. D.; Choi, W. J. |
| 2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
| 2014-04 | Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy | Lee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon |
| 2013-10-21 | Excited exciton and biexciton localised states in a single quantum ring | Kim, H. D.; Kyhm, K.; Taylor, R. A.; Nicolet, A. A. L.; Potemski, M.; Nogues, G.; Je, K. C.; Lee, E. H.; Song, J. D. |
| 2014-04 | Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer | Oh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J. |
| 2013-04-21 | Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflection | Lee, E. H.; Song, J. D.; Yoon, J. J.; Bae, M. H.; Han, I. K.; Choi, W. J.; Chang, S. K.; Kim, Y. D.; Kim, J. S. |
| 2019-10-16 | Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike Transitions | Koong, Z. X.; Scerri, D.; Rambach, M.; Santana, T. S.; Park, S., I; Song, J. D.; Gauger, E. M.; Gerardot, B. D. |
| 2014-03 | Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structure | Yoen, K. H.; Lee, E. H.; Kim, S. Y.; Park, T. E.; Bae, M. H.; Song, J. D. |
| 2011-09 | Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots | Lim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S. |
| 2018-11 | Growth of pure wurtzite InGaAs nanowires for photovoltaic and energy harvesting applications | Kang, H. -K.; Kim, J. Y.; Noh, M. -S.; Kang, C. -Y.; Kim, Y. D.; Cho, M. -H.; Song, J. D. |
| 2011-11 | High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy | Ha, S. K.; Song, J. D.; Han, I. K.; Ko, D. Y.; Kim, S. Y.; Lee, E. H. |
| 2008-12 | Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
