Browsing byAuthorCheong, Byung-ki
Showing results 23 to 52 of 54
| Issue Date | Title | Author(s) |
|---|---|---|
| 2015-05 | High carrier mobility in Si-MOSFETs with a hexagonal boron nitride buffer layer | Liu, Xiaochi; Hwang, E. H.; Yoo, Won Jong; Lee, Suyoun; Cheong, Byung-ki |
| 2015-11 | High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD) | Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-ki; Kim, Jin-Sang; Lee, Suyoun |
| 2007-09 | High speed phase change random access memory with (Ge1Sb2Te4)(0.9)(Sn1Bi2Te4)(0.1) complete solid solution | Ahn, Dong-Ho; Lee, Tae-Yon; Lee, Dong-Bok; Yim, Sung-Soo; Wi, Jung-Sub; Jin, Kyung-Bae; Lee, Min-Hyun; Kim, Ki-Bum; Kang, Dae-Hwan; Jeong, Han-ju; Cheong, Byung-ki |
| 2022-11 | Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films | Shin, Sang Yeol; Lee, Suyeon; Cheong, Byung-ki; Choi, Yong Gyu |
| 2010-03-29 | Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature | Wu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki |
| 2012-07-31 | Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys | Kang, Tae Dong; Sim, Kyung Ik; Kim, Jae Hoon; Wu, Zhe; Cheong, Byung-ki; Lee, Hosun |
| 2011-03 | Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te Ratios | Kang, Tae Dong; Sirenko, Andrei; Park, Jun-Woo; Lee, Hyun Seok; Lee, Suyoun; Jeong, Jeung-hyun; Cheong, Byung-ki; Lee, Hosun |
| 2005-09 | Kinetic Characteristics of FCC to Hexagonal Transformation in (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) Chalcogenide Alloy for Phase Change Memory | Ahn, Dong-Ho; Kim, Hyun-Mi; Lee, Min-Hyun; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
| 2016-10-05 | Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films | Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-ki; Park, Bae Ho; Yoon, Sungwon; Suh, B. J.; Kim, Changyoung; Seo, S. S. A.; Lee, Suyoun |
| 2018-06 | Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization | Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu |
| 2008-12-01 | Microstructural and optical analysis of superresolution phenomena due to Ge2Sb2Te5 thin films at blue light regime | Lee, Hyun Seok; Lee, Taek Sung; Lee, Yongwoon; Kim, Jooho; Lee, Suyoun; Huh, Joo-Youl; Kim, Donghwan; Cheong, Byung-ki |
| 2010-11 | Modified Potential Well Formed by Si/SiO2/TiN/TiO2/SiO2/TaN for Flash Memory Application | Zhang, Gang; Ra, Chang Ho; Li, Hua-Min; Shen, Tian-zi; Cheong, Byung-ki; Yoo, Won Jong |
| 2012-10 | Modified write-and-verify scheme for improving the endurance of multi-level cell phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |
| 2011-03 | Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe | Zhang, Gang; Wu, Zhe; Jeong, Jeung-Hyun; Jeong, Doo Seok; Yoo, Won Jong; Cheong, Byung-ki |
| 2007-01-08 | Nanometer-scale order in amorphous Ge2Sb2Te5 analyzed by fluctuation electron microscopy | Kwon, Min-Ho; Lee, Bong-Sub; Bogle, Stephanie N.; Nittala, Lakshmi N.; Bishop, Stephen G.; Abelson, John R.; Raoux, Simone; Cheong, Byung-ki; Kim, Ki-Bum |
| 2014-02-03 | Nanosecond switching in GeSe phase change memory films by atomic force microscopy | Bosse, James L.; Grishin, Ilya; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun; Kolosov, Oleg V.; Huey, Bryan D. |
| 2012-04 | Numerical Study on Passive Crossbar Arrays Employing Threshold Switches as Cell-Selection-Devices | Jeong, Doo Seok; Ahn, Hyung-Woo; Kim, Su-Dong; An, Myunggi; Lee, Suyoun; Cheong, Byung-ki |
| 2014-06 | Optical properties of amorphous Ge1-x Se (x) and Ge1-x-y Se (x) As (y) thin films - optical gap bowing and phonon modes | Lee, Hosuk; So, Hyeon Seob; Lee, Hosun; Shin, Hae-Young; Yoon, Seokhyun; Ahn, Hyung-Woo; Kim, Su-Dong; Lee, Suyoun; Jeong, Doo-Seok; Cheong, Byung-ki |
| 2007-04 | Origin of nonlinear optical characteristics of crystalline Ge-Sb-Te thin films for possible superresolution effects | Lee, Hyun Seok; Cheong, Byung-ki; Lee, Taek Sung; Jeong, Jeung-Hyun; Lee, Suyoun; Kim, Won Mok; Kim, Donghwan |
| 2021-09 | Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 & nbsp;film probed via in situ EXAFS under DC electric field | Shin, Sang Yeol; Kim, Hyun; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
| 2007-01 | Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography | Yang, Ki-Yeon; Hong, Sung-Hoon; Kim, Deok-kee; Cheong, Byung-ki; Lee, Heon |
| 2011-09 | Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior | Jeong, Doo Seok; Cheong, Byung-ki; Kohlstedt, Hermann |
| 2007-03 | Real time optical-electrical characterization of PbTe thin film material for super-resolution optical memory | Lee, Hyun Seok; Lee, Taek Sung; Jeong, Jeung-hyun; Lee, Suyoun; Kim, Won Mok; Cheong, Byung-ki |
| 2007-01-15 | Response to "Comment on 'Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases'" [J. Appl. Phys. 97, 093509 (2005)] | Lee, Bong-Sub; Abelson, John R.; Bishop, Stephen G.; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
| 2006-08-30 | Room temperature synthesized GaAs quantum dot embedded in SiO2 composite film | Lee, Sunghun; Shin, Dong Wook; Kim, Won Mok; Cheong, Byung-ki; Lee, Taek Sung; Lee, Kyeong Seok; Cho, Sunghun |
| 2020-06-23 | Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity | Lee, Milim; Cho, Seong Won; Kim, Seon Jeong; Kwak, Joon Young; Ju, Hyunsu; Yi, Yeonjin; Cheong, Byung-ki; Lee, Suyoun |
| 2014-09-01 | Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film | Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
| 2014-11-18 | The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se | Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun |
| 2010-01 | The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe | Park, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki |
| 2006-10-09 | Thermal conductivity of phase-change material Ge2Sb2Te5 | Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub; Abelson, John R.; Kwon, Min-Ho; Kim, Ki-Bum; Bishop, Stephen G.; Cheong, Byung-ki |
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