| 2003-10 | A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect | Sim, HS; Kim, SI; Jeon, H; Kim, YT |
| 1997-11 | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK |
| 2003-10-15 | Atomic structure of random and c-axis oriented YMnO3 thin films deposited on Si and Y2O3/Si substrates | Kim, YT; Kim, IS; Kim, SI; Yoo, DC; Lee, JY |
| 2002-01 | Characteristics of plasma enhanced chemical vapor deposited W-B-N thin films | Kim, DJ; Sim, HS; Kim, SI; Kim, YT; Jeon, H |
| 2005-12 | Characterization of the Phase II metabolites of rutaecarpine in rat by liquid chromatography-electrospray ionization-tandem mass spectrometry | Lee, SK; Lee, DW; Jeon, TW; Jin, CH; Kim, GH; Jun, IH; Lee, DJ; Kim, SI; Kim, DH; Jahng, Y; Jeong, TC |
| 1998-05-01 | Comparison of the effects of electron and proton irradiation on n(+)-p-p(+) silicon diodes | Taylor, SJ; Yamaguchi, M; Yamaguchi, T; Watanabe, S; Ando, K; Matsuda, S; Hisamatsu, T; Kim, SI |
| 1996-08-05 | Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates | Kim, SI; Kim, MS; Kim, Y; Son, CS; Hwang, SM; Min, BD; Kim, EK; Min, SK |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD | Son, CS; Cho, S; Choi, IH; Kim, SI; Kim, YT; Chung, SW |
| 1997-08-01 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Kim, Y; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 1997-10 | Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | Son, SC; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2004-12 | Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition | Son, CS; Kim, SM; Kim, YH; Kim, SI; Kim, YT; Yoon, KH; Choi, IH; Lopez, HC |
| 1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 2003-10 | Dynamic softening behavior of Al-18Si alloy produced by spray forming | Kim, SI; Ko, BC; Lee, HI; Yoo, YC |
| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2004-12 | Effect of oxygen partial pressure on the surface morphology of sputtered YBCO thin films | Kim, YH; Kim, SI |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 2002-06-01 | Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures | Lee, SK; Kim, YT; Kim, SI; Lee, CE |
| 2003-11 | Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Choi, IH |
| 2001-07 | Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN | Kim, JW; Kim, SI; Kim, YT; Kim, S; Sung, MY; Choi, IH |
| 1996-05 | Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs | Son, CS; Kim, SI; Kim, TG; Kim, Y; Kim, MS; Min, SK |
| 2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
| 2001-12 | Electrical properties of cobalt contact to p-GaN | Kim, JW; Won, JH; Park, SY; Kim, SI; Choi, IH |
| 1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2001-12 | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | Choi, HS; Park, KS; Hur, JS; Choi, IH; Kim, YT; Kim, SI |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2004-11 | Enhancement of electrical properties of Pt/SrBi2Nb2O9/Pt structures by remote oxygen plasma annealing | Kim, IS; Kim, YM; Choi, IH; Kim, SI; Kim, YH; Yoo, DC; Lee, JY; Son, CS |
| 1995-12 | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl4 | Kim, MS; Kim, Y; Kim, SI; Hwang, SM; Kang, JM; Park, YK; Min, SK |
| 2003-09 | Epitaxial growth and properties of Bi-substituted yttrium-iron-garnet films grown on (111) gadolinium-gallium-garnet substrates by using rf magnetron sputtering | Kim, YH; Kim, JS; Kim, SI; Levy, M |
