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Showing results 1 to 11 of 11

Issue DateTitleAuthor(s)
2000-09-29Characteristics of GaN films grown on the stress-imposed Si(111)Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH
2002-03Effects of N+-implanted sapphire (0001) substrate on GaN epilayerCho, YS; Koh, EK; Park, YJ; Koh, D; Kim, EK; Moon, Y; Leem, SJ; Kim, G; Byun, D
2002-06Implantation of N ions on sapphire substrate for improvement of GaN epilayerCho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK
2001Implantation of N-ion on sapphire substrate for GaN epilayerPark, YJ; Cho, YS; Koh, EK; Kim, EK; Kim, GG; Byun, DJ; Min, SK
2002-06Improved crystalline quality of GaN by substrate ion beam pretreatmentCho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D
2003-06Influence of intentionally strained sapphire substrate on GaN epilayersKim, J; Park, YJ; Byun, D; Jhin, J; Kang, M; Koh, EK; Moon, Y; Min, SK
1998-05-15Raman study of the nitrided GaAs thin layersKoh, EK; Park, YJ; Kim, EK; Min, SK; Choh, SH
2001-12Structural investigation of GaN powders thermally annealed at various temperaturesHong, JK; Sun, KT; Kim, S; Sung, MY; Park, CS; Koh, EK; Park, IW; Park, YJ; Kim, EK
2000-09The effect of N+-implanted Si(111) substrate and buffer layer on GaN filmsKoh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH
2003-02The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayersKim, J; Park, YJ; Byun, D; Kim, EK; Koh, EK; Park, IW
2002-05-31Thermal evolution of alpha- and beta-phases in the thin GaN on (001) GaAsPark, YJ; Koh, EK; Park, CS; Park, IW; Kim, EK
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