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Showing results 5 to 9 of 9

Issue DateTitleAuthor(s)
2014-02-03Nanosecond switching in GeSe phase change memory films by atomic force microscopyBosse, James L.; Grishin, Ilya; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun; Kolosov, Oleg V.; Huey, Bryan D.
2021-09Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 & nbsp;film probed via in situ EXAFS under DC electric fieldShin, Sang Yeol; Kim, Hyun; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu
2012-05-01Role of local structure in the phase change of Ge-Te filmsChoi, Yong Gyu; Kovalskiy, Andriy; Cheong, Byung-Ki; Jain, Himanshu
2014-09-01Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe filmShin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu
2014-11-18The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-SeShin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun
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