2006-09 | Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications | Park, Jae-Wan; Park, Jong-Wan; Jung, Kyooho; Yang, Min Kyu; Lee, Jeon-Kook |
2006-07 | Low-voltage resistive switching of polycrystalline SrZrO(3): Cr thin films grown on Si substrates by off-axis rf sputtering | Park, Jae-Wan; Park, Jong-Wan; Yang, Min Kyu; Jung, Kyooho; Kim, Dal-Young; Lee, Jeon-Kook |
2011-08 | Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films | Yang, Min Kyu; Park, Jae-Wan; Lee, Jeon-Kook |
2006-06-15 | Resistive switching characteristics and set-voltage dependence of low-resistance state in sputter-deposited SrZrO3 : Cr memory films | Park, Jae-Wan; Kim, Dal-Young; Park, Jong-Wan |
2010-09 | Resistive switching characteristics of TiN/MnO2/Pt memory devices | Yang, Min Kyu; Park, Jae-Wan; Ko, Tae Kuk; Lee, Jeon-kook |
2007 | Set power dependency on the resistive switching in Cr-doped SrZrO3 thin films for nonvolatile memory devices | Park, Jae-Wan; Jung, Kyooho; Yang, Min Kyu; Park, Jong-Wan; Lee, Jeon-Kook |
2007-01-29 | Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films | Jung, Kyooho; Seo, Hongwoo; Kim, Yongmin; Im, Hyunsik; Hong, JinPyo; Park, Jae-Wan; Lee, Jeon-Kook |
2006-09 | Temperature-dependent switching current of Cr-doped SrZrO3/SrRuO3 deposited for ReRAM applications by using PLD | Jung, Kyooho; Seo, Hongwoo; Kim, Nambin; Kim, Yongmin; Im, Hyunsik; Park, Jae-Wan; Yang, Min Kyu; Lee, Jeon-Kook |
2010-11 | Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO3 | Yang, Min Kyu; Jung, Kyooho; Kim, Yongmin; Ko, Tae Kuk; Im, Hyunsik; Park, Jae-Wan; Lee, Jeon-Kook |