| - | Phtoluminescence spectroscopy of self-assembled InAs quantum dots using a Si-molecular beam | 박영민; Park Young Ju; 김광무; KIM EUN KYU |
| - | Role of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots | SONG JIN-DONG; Y. M. Park; J. G. Lim; Shin Jae Cheol; Park Young Ju; Choi Won Jun; Han Il Ki; Cho Woon Jo; Lee Jung Il |
| - | Role of thin insertion layer on the optical properties of InGaAs quantum dots | Jung Ho Lee; Choi Won Jun; Han Il Ki; Park Young Ju; Eun Kyu Kim; Chong Mu Lee; Hyoun-Woo Kim |
| - | Selective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy | Park Young Ju; 한철구; 김광무; 정석구; KIM EUN KYU; Min Suk-Ki |
| - | Selective formation of InAs quantum dot structure by molecular beam epitaxy | 한철구; 장영준; 오치성; Park Young Ju; KPARK KYUNG HYUN; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| - | Selective formation of InAs self-assembled quantum dots on AFM-patterned GaAs | 현찬경; Park Young Ju; KIM EUN KYU; 최승철; 송상헌; 황성우; 민병돈; 안도열 |
| - | Selective formation of semiconductor quantum dots for device applications | KIM EUN KYU; Park Young Ju; 손맹호; KIM YOUN |
| - | Selective growth of InAs quantum dots on pattened Si-SiO₂ substrates | 최범호; Chang-Min Park; 송상헌; 황성우; MIN BYUNG DON; 손맹호; 안도열; Park Young Ju; KIM EUN KYU; Min Suk-Ki |
| - | Selective positioning of InAs quantum dots on GaAs substrate directly by atomic force microscope | 현찬경; 최승철; 김광무; MIN BYUNG DON; 황성우; 안도열; Park Young Ju; KIM EUN KYU |
| - | Self-assembled InAs quantum dots on strained InGaAs/GaAs superlattice | Park Young Ju; 김광무; 박영민; KIM EUN KYU |
| - | Semiconductor laser diode die bonding using AuSn solder | 최상현; 배형철; Heo Duchang; Han Il Ki; Cho Woon Jo; Choi Won Jun; Park Young Ju; Lee Jung Il; 이천 |
| - | Semiconductor nanostructure fabrication and its application to the devices | Eun Kyu Kim; Chan Kyeong Hyon; Park Young Ju |
| - | Simple model for 1/f noise in polycrystalline silicon thin-film transistors | Han Il Ki; Choi Won Jun; KIM HWE JONG; Park Young Ju; Cho Woon Jo; Lee, Jung Il; Alain Chovet; Jean Brini |
| - | Single electron tunneling effects in a heavily doped n+ GaAs quantum dot | B.H.Choi; S.H.Son; K.H.Cho; S.W.Hwang; D.Ahn; Y.M.Park; Park Young Ju; E.K.Kim |
| - | Single electron tunneling through a highly doped n+ GaAs quantum dot | S.H.Son; B.H.Choi; K.H.Cho; Y.M.Park; Park Young Ju; E.K.Kim; S.W.Hwang; D.Ahn |
| - | Size control of the micro-crystalline GaN | 노정현; Park Young Ju; KIM EUN KYU; 노정현; 심광보 |
| - | Spectral response change in a quantum well infrared photodetector by using quantum well intermixing technique | J.C. Shin; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; E.K. Kim; H.J. Kim; J.W. Choi |
| - | Spectral response modification of quantum well infrared photodetector by quantum well intermixing. | Shin Jae Cheol; Choi Won Jun; Han Il Ki; Park Young Ju; Lee Jung Il; KIM EUN KYU; H.J. Kim; 최정우 |
| - | Structural and magnetic properties of manganese doped ZnO films prepared by sol-gel method | I.-W.Park; Y.M.Kim; J.H.Lee; E.K.Koh; C.S.Park; S.H.Choh; Y.S.Lee; S.S.Kim; Park Young Ju |
| - | Structural characteristics of InAs QDs on GaAs(100) grown by the MBE technique | 심광보; 노정현; Park Young Ju; KIM EUN KYU |
| - | Structural investigation of GaN powder thermally annealed at various temperatures | Hong Jin Ki; PARK CHAN-SOO; 고의관; 박일우; Park Young Ju; KIM EUN KYU; 김상식; 성만영 |
| - | Study of crystallographical defects of the GaN micro-crystals by Raman spectroscopy and X-ray diffraction | 고의관; C.S. Park; 박일우; Park Young Ju; KIM EUN KYU; 조성호 |
| - | Study of inserting layer on characteristics of InxGa1-xAs/GaAs quantum dots | KIM EUN KYU; 박세기; Park Young Ju |
| - | TEM investigation of InAs quantum dots multi-stacked on GaAs(100) substrates | 노정현; Park Young Ju; 김광무; 박영민; KIM EUN KYU; 이선우; 심광보 |
| - | The effect of stress-imposed Si(111) substrate on GaN film | 고의관; Park Young Ju; KIM EUN KYU; PARK CHAN-SOO; 이석현; 이정희; 조성호 |
| - | The growth of high quality GaAs epilayers on stripe patterned InP substrates with a transferred GaAs fused layer | 황성민; Park Young Ju; KIM EUN KYU; 최인훈 |
| - | The postannealing effects of GaN epilayer grown on N-ion implanted sapphire substrate | Junggeun Jhin; Jaekyun Kim; Mingu Kang; Dongjin Byun; Park Young Ju; Eui Kwan Koh |
| - | Thermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO ₂ capping layers | J.H. Lee; Choi Won Jun; Park Young Ju; Han Il Ki; Lee Jung Il; Cho Woon Jo; E.K. Kim; C.M. Lee; H.-W. Kim |
| - | 축방향 자기장을 인가한 VGF GaAs 단결성장 및 특성평가 . | Park Young Ju; Min Suk-Ki; 윤경식 |
| - | 축방향자기장 인가된 수직온도구배냉각법에서 반응용기에 따른 GaAs 단결정의 특성 . | Park Young Ju; KIM EUN KYU; 손맹호; CHOI WON CHEOL; Min Suk-Ki |
