| 2005-10 | 1999년 선정 국가지정연구실사업의 성과분석 | 김의성; 금동화; 송용일, et al |
| 1990-01 | 3-5% Al 을 첨가한 UHCS 의 초소성 특성에 관한 연구 | 금동화; 강형; 이용연 |
| 1990-01 | Al 의 첨가가 UHCS 의 펄라이트 판상간격에 미치는 영향 . | 금동화; 이동훈; 안재환 |
| 1992-01 | Aluminum effects on the microstructure and the superplasticity of ultra-high carbon steels processed by DETWAD. | 금동화; 강형; 김동훈 |
| 1997-01 | Analysis of the threshold stress in the Al-Ti alloys exhibiting high strain rate superplasticity | 금동화 |
| 1997-01 | Analysis of the threshold stress in the Al-Ti alloys exhibiting high strain rate superplasticity | 금동화 |
| 1996-01 | Analysis of x-ray diffraction patterns from mechanically alloyed Al-Ti powders. | 김혜성; 서동수; 김긍호, et al |
| 1996-11 | Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD | 임동섭; 변동진; 김긍호, et al |
| 1998-11 | Comparison of different substrate pre-treatment for GaN growth by MOCVD | 김현정; 변동진; 박달근, et al |
| 1996-01 | Comparison of GaN on sapphire with and without nitridation | 변동진; 정재식; 금동화, et al |
| 1996-01 | Defeat of GaN films on SiC(0001)with GaN buffer layers by MOCVD. | D. Byun; D. Lim; I. H. Choi, et al |
| 1996-01 | Defects in GaN films on SiC(0001) with GaN buffer layers by MOCVD. | 변동진; 금동화; 김긍호, et al |
| 1996-01 | Deformation modes of the superplastic Al-10wt%Ti alloy at high strain-rates. | 금동화; 서상희; 김혜성, et al |
| 1996-01 | Determination of titanium solubility in alpha-aluminum during high energy milling. | 김긍호; 김혜성; 금동화 |
| 1986-01 | Development of ferrous laminated composites with unique microstructures by control of carbon diffusion. | 금동화; T. Oyama; O. Ruano, et al |
| 1996-06 | Early history of transmission electron microscope and it's role on the advancement of materials science and engineering. | 금동화 |
| 1998-11 | Effect of Al-addition on microstructural refinement of ultra-high carbon steels during thermomechanical processes | 금동화; 강형 |
| 1997-10 | Effect of Al-addition on the microstructural refinement of ultrahigh carbon steels | 금동화 |
| 1990-01 | Effect of residual stress on Si-condumptin during W-deposition by LPCVD. | 금동화; H. C. Yoon; J. J. lee |
| 1996-01 | Effect of sapphire nitridation on GaN by MOCVD | 변동진; 정재식; 금동화, et al |
| 1997-06 | Effect of sapphire nitridation on GaN by MOCVD | 변동진; 김긍호; 정재식, et al |
| 1996-01 | Effect of sapphire nitridation on GaN by MOCVD. | 금동화; 변동진; 김긍호, et al |
| 1997-11 | Effect of substrate surface roughness modified by nitridation on GaN growth | 정재식; 변동진; 김병호, et al |
| 2000-06 | Effects of reactive ion beam treatment of sapphire surface to optimize the deposition of GaN films | 김현정; 변동진; 김긍호, et al |
| 1995-01 | Enhancement of Ti-supersaturation in alpha-aluminum by mechanical alloying. | 금동화; 김혜성; 김긍호 |
| 1996-01 | Epitaxial growth and characterization of GaN films on 6H-SiC by MOVPE. | 남옥현; 김긍호; 박달근, et al |
| 1997-01 | Finite element analysis of solidification processes of axisymmetric castings considering phase change and contact | 구본영; 금영탁; 금동화, et al |
| 1995-01 | Formation and stability of Al//3Ti in the hyper-peritectic Al-Ti alloys after mechanical alloying. | 김긍호; 김혜성; 금동화 |
| 1996-01 | Formation of Al//3Ti compound from mechanical alloyed hyper-peritectic Al-Ti alloys. | 금동화; 김긍호; 김혜성 |
| 1996-03 | Formation of Al//3Ti from mechanically alloyed hyper-peritectic Al-Ti powder. | 김혜성; 서동수; 김긍호, et al |
