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Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy

Other Titles

Hydride vapor phase epitaxy를 이용한 sapphire 기판 상에 GaN 후막의 성장특성에 관한 연구

Authors

이정욱; 유지범; 변동진; 금동화

Issue Date

1997-06

Citation

한국재료학회지 = Korean journal of materials research, v.7, no.6, pp.492 - 497

Keywords

GaN film; hydride vapor phase epitaxial growth; ZnO buffer layer

URI

https://pubs.kist.re.kr/handle/201004/143753

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KIST Article > Others

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