Browsing by Author 박영민

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Showing results 1 to 30 of 48

Issue DateTitleAuthor(s)
2004-07A micro-photoluminescence study of vertically stacked InAs-GaAs double-layer quantum dotsYoung Chul Choi; Tae Geun Kim; 박영민, et al
2002-11Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice김광무; 박용주; 박영민, et al
2000-11Alignment of InAs quantum dots on GaAs using the manipulation of strain fields김광무; 박용주; 박영민, et al
2000-04Alignment of the InAs quantum dots on GaAs using the manipulation of strain fields김광무; 박용주; 박영민, et al
2007-01Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy김지훈; 박용주; 박영민, et al
2004-07Carrier dynamics in InGaAs dots-in-a-well structure formed by atomic-layer epitaxy박영민; 박용주; 김광무, et al
2004-09Carrier dynamics in the coupled structure of InGaAs quantum dots in a well박영민; Keon-Ho Yoo; 박용주, et al
2000-11Control of semiconductor nano-structures for quantum devices김은규; 김효진; 김광무, et al
2001-06Defect generation in multi-stacked InAs quantum dot/GaAs structures노정현; 박용주; 김광무, et al
2006-08Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure정인영; 박영민; 박용주, et al
2003-06Detection wavelength tuning of infrared-photodetector by thermal treatment of AlGaAs/GaAs황성호; 신재철; 최원준, et al
2009-07Development of an ozone gas sensor using single-walled carbon nanotubes박영민; 동기영; 이진우, et al
2003-10Effect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication송진동; 박영민; 임재구, et al
2005-03Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots임재구; 박용주; 박영민, et al
2001-02Effect of Si doping on InAs/GaAs quantum dots조광식; 윤석호; 황희돈, et al
2000-12Effects of a Si molecular beam on the formation of InAs quantum dots박영민; 박용주; 김광무, et al
2000-11Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots박세기; 박용주; 박영민, et al
2003-08Effects of an InxGa1-xAs asymmetric strain release layer on the optical properties of InAs/GaAs quantum dots임재구; 최은하; 박용주, et al
2003-12Effects of Growth Sequence on Optical and Structural Porperties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy송진동; 박영민; 신재철, et al
2004-11Effects of Si-doped GaAs layer on optical properties of InAs quantum dots박영민; 박용주; 김광무, et al
2000-01Effects of Si-molecular beam on the formation of InAs quantum dots박영민; 박용주; 김광무, et al
2003-02Electrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique박영민; 박용주; 김광무, et al
2004-01Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique박영민; 박용주; 김광무, et al
2003-10Electron Confinement Effect and Optical Properties of InAs/GaAs Quantum Dots Grown by Using ALE Technique김지훈; 박용주; 박영민, et al
2005-03Electron-Hole Separation in InAs Quantum Dots박영민; 박용주; 김광무, et al
2005-05Estimation of built-in dipole moment in InAs quantum dots박영민; 박용주; 송진동, et al
2000-11Fabrication of wirelike In0.5Ga0.5As quantum dots on 2˚-off GaAs (100) substrates김효진; 박용주; 박영민, et al
2001-05Fabrication of wirelike InAs quantum dots on 2 ˚ -off GaAs (100) substrates by changing the thickness of the InAs layer김효진; 박용주; 박영민, et al
2000-09Fabrications of wire-like InAs quantum dots on 2o-off GaAs (100) substrates by control of the InAs layer thickness김효진; 박용주; 박영민, et al
2004-09Formation mechanism of self-assembled quantum dots-in-a-well structure박용주; 박영민; 송진동, et al

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