Browsing by Author 유성필

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Showing results 1 to 14 of 14

Issue DateTitleAuthor(s)
2007-08980 nm 파장대역을 갖는 InGaAs 양자점 레이저 다이오드의 발진특성정경욱; 김광웅; 유성필, et al
2007-08Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode김광웅; 정경욱; 유성필, et al
2006-03Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy조남기; 유성필; 송진동, et al
2007-09Comparisons of lasing characteristics of InGaAs quantum-dot and quantum well laser diodes정경욱; 김광웅; 유성필, et al
2009-07Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes조남기; 김광웅; 유성필, et al
2005-07Distributed Bragg reflector grown with digital-alloy AlGaAs/GaAs for the application to 1.3 ㎛ quantum dot surface emitting laser diodes조남기; 김광웅; 유성필, et al
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy유성필; 조남기; 임주영, et al
2009-10Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots유성필; 조남기; 임주영, et al
2009-10Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density유성필; 조남기; 임주영, et al
2007-07Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode유성필; Y. T. Lee; 조남기, et al
2006-10InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3㎛ With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy김광웅; 조남기; 유성필, et al
2007-08InGaAs 양자점 레이저 다이오드의 발진 파장 조절을 위한 열처리 기법김광웅; 정경욱; 유성필, et al
2007-11Thermal treatment for tuning the lasing wavelength of quantum dot laser diodes김광웅; 박문호; 정경욱, et al
2006-01-02열처리를 이용한 저밀도 양자점 구조를 가지는 반도체소자의 제조 방법송진동; 유성필; 이정일, et al

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