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Showing results 1 to 28 of 28

Issue DateTitleAuthor(s)
1991-01A study on the LPE growth of InP/GaInAsP and its lasing wavelength.서상희; 이경구; 전준범, et al
2003-02Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topographyP. Offermans; P. M. Koenraad; J. H. Wolter, et al
2003-07CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers허두창; 송진동; 한일기, et al
2004-01Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots이창윤; 송진동; 김종민, et al
2013-01Design and Fabrication of 1.35-μm Laser Diodes With Full Digital-Alloy InGaAlAs MQW허두창; 송진동; 한일기, et al
2003-12Digital Alloy InGaAs/InAlAs Laser Structures Studied by Cross-Sectional Scanning Tunneling MicropscopyP. Offermans; P. M. Koenraad; J. H. Wolter, et al
2005-03Disordering of InGaAs/GaAs multi-quantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration유재수; 김종민; 이용탁, et al
2009-10Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots유성필; 조남기; 임주영, et al
2009-10Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density유성필; 조남기; 임주영, et al
2003-02Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering유재수; 송진동; 이용탁, et al
2003-06Effects of thermal annealing on optical and structural properties of 1.3 ㎛ digital-alloy InGaAlAs MQW송진동; Kim Jong Min; 배성주, et al
2003-05Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots이창윤; 송진동; 이용탁, et al
2004-04Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source김종민; 이용탁; 송진동, et al
2005-02Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries유재수; 송진동; 이용탁, et al
2003-02Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures.유재수; 송진동; 이용탁, et al
2003-04Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea유재수; 송진동; 김종민, et al
2003-12Improvment of the high-temperature characteristics of 1.52 ㎛ InGaAs laser with (InAlAs)0.4(InGaAs)0.6 short-period superlattice barriers허두창; 송진동; 최원준, et al
2005-08Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure유재수; 송진동; 이용탁, et al
2004-01Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers유재수; 송진동; 김종민, et al
2004-02Initiation and evolution of phase separation in GaP/InP short-period superlatticesB. Shin; W. Chen; R. S. Goldman, et al
2004-10MBE growth and optical properties of digital-alloy 1.55 ㎛ multi-quantum wells송진동; 최원준; 김종민, et al
2006-04Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources송진동; 최원준; 이정일, et al
2005-10Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy김종민; 박찬영; 이용탁, et al
2009-07Optical properties of fully digital-alloyed 1.3 μm MQW and its application to laser diodes허두창; 송진동; 한일기, et al
2003-12Optical Properties of Quantum-Wires Grown Using Lateral Composition Modulation Induced by (InP)1/(GaP)1 Short-Period Superlattices송진동; 김종민; 이용탁
2004-02Parametric Study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy송진동; 허두창; 한일기, et al
2009-10Raman scattering studies of (GaP)n/(InP)n (n = 1, 1.7, 2) short-period superlattice structuresH. Rho; J.-R. Lim; 송진동, et al
2011-10Raman Studies of InGaAlAs Digital Alloys민경인; 노희석; 송진동, et al

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