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Showing results 1 to 30 of 44

Issue DateTitleAuthor(s)
2007-08980 nm 파장대역을 갖는 InGaAs 양자점 레이저 다이오드의 발진특성정경욱; 김광웅; 유성필, et al
2010-10A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μm surface emitting laser diodes조남기; 김광웅; 송진동, et al
2007-08Activities on In(Ga)As/GaAS QDs in KIST최원준; 송진동; 조남기, et al
2010-02AlGaAs 위에 성장한 저밀도 InAs/AlGaAs 양자점조남기; 하승규; 박성준, et al
2011-01Applicability of steady state mofel to carrier thermodynamics in InAs quantum dots하싸안; 코필로프; 송진동, et al
2007-08Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode김광웅; 정경욱; 유성필, et al
2006-03Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy조남기; 유성필; 송진동, et al
2007-09Comparisons of lasing characteristics of InGaAs quantum-dot and quantum well laser diodes정경욱; 김광웅; 유성필, et al
2009-07Critical exciton kinetic energy in InAs/GaAs quantum dot sample by infrared time resolved spectroscopy하싸안; 올렉씨; 송진동, et al
2007-08Detection Energy 가변 PLE 측정을 통한 양자우물 구조의 내부 전자 구조 분석임아람; 윤홍; 조남기, et al
2009-07Digital-alloy AlGaAs/GaAs distributed Bragg reflector for the application to 1.3 ㎛ surface emitting laser diodes조남기; 김광웅; 유성필, et al
2005-07Distributed Bragg reflector grown with digital-alloy AlGaAs/GaAs for the application to 1.3 ㎛ quantum dot surface emitting laser diodes조남기; 김광웅; 유성필, et al
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy유성필; 조남기; 임주영, et al
2009-10Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots유성필; 조남기; 임주영, et al
2009-10Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density유성필; 조남기; 임주영, et al
2007-07Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 μm laser diode유성필; Y. T. Lee; 조남기, et al
2010-04Evidence of correlated electron hole pair in dot in asymmetric quantum well structure하아싼; 송진동; 최원준, et al
2009-04Fabrication of coupled GaAs quantum dots and their optical properties김종수; 송진동; Clare C. Byeon, et al
2010-04Formation of low density InAs QDs in indirect bandgap Al(Ga)As matrix (λ~790nm)조남기; 하승규; 박성준, et al
2011-10Growth of GaAs on Si substrate using InAs defect reduction layer최원준; 조남기; 임주영, et al
2009-07Growth of low density InGaAs quantum dots using MEMBE조남기; 박성준; 송진동, et al
2010-04Growth of three-dimensional InAs islands on (001) Si Substrate임주영; 조남기; 송진동, et al
2006-05Improved Uniformity of GaAs/AlGaAs DBR Using the Digital Alloy AlGaAs Layer조남기; 송진동; 최원준, et al
2011-08In/Ga inter-diffusion in InAs quantum dot in InGaAs/GaAs asymmertic quamtum well하싸안; 송진동; 최원준, et al
2012-07In/Ga Inter-Diffusion in InAs Quantum Dot in InGaAs/GaAs Asymmetric Quantum WellM. H. Abdellatif; 송진동; 최원준, et al
2007-08InAs 양자점과 DASWELL을 이용한 광대역 SLD의 광학적 특성분석박성준; 김광웅; 윤홍, et al
2006-10InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3㎛ With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy김광웅; 조남기; 유성필, et al
2009-11Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formationV. D. Dasika; 송진동; 최원준, et al
2007-08InGaAs 양자점 레이저 다이오드의 발진 파장 조절을 위한 열처리 기법김광웅; 정경욱; 유성필, et al
2009-07Lasing characteristics of GaAs-based 1300 nm wavelength region InAs quantum dot laser diode김광웅; 조남기; 송진동, et al

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