| 2004-11 | Direct growth of SiC nanorods on Si using APCVD and single precursors | Rho, D; Kim, J; Byun, DJ; Yang, JW; An, JG; Kim, N |
| 2001 | Implantation of N-ion on sapphire substrate for GaN epilayer | Park, YJ; Cho, YS; Koh, EK; Kim, EK; Kim, GG; Byun, DJ; Min, SK |
| 2004-06 | Nanogranular Co-Fe-Al-O films with a high electrical resistivity for GHz magnetoelastic device applications | Sohn, JC; Byun, DJ; Lim, SH |
| 2004-05 | Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range | Sohn, JC; Byun, DJ; Lim, SH |
| 2001-05-28 | Sterically controlled silacycloalkyl diamide complexes of titanium(IV): Synthesis, structure, and catalytic behavior of (cycl)Si(NBut)(2)TiCl2 [(cycl)Si = silacyclobutane, silacyclopentane, silacyclopentene, and silacyclohexane] | Kim, SJ; Jung, IN; Yoo, BR; Kim, SH; Ko, JJ; Byun, DJ; Kang, SO |
| 1998-11 | Surface modification of alpha-Al2O3(0001) by N-2(+) ion irradiation | Choi, WK; Choi, SC; Jung, HJ; Koh, SK; Byun, DJ; Kum, DW |
| 1997-10 | The effect of substrate surface roughness on GaN growth using MOCVD process | Kum, DW; Byun, DJ |
| 2004-06 | Theoretical and experimental permeability spectra of nano-granular Co-Fe-Al-O films for GHz magnetoelastic device applications | Sohn, JC; Byun, DJ; Lim, SH |
