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Showing results 1 to 13 of 13

Issue DateTitleAuthor(s)
-Carbon doping characteristics in GaAs grown by LPMOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim
-Characteristics of C-doped GaAs and critical layer thickness.Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성
-Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG
-DC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.KANG KWANG NHAM; Yoo Jong Lee; EOM KYUNG SOOK; KIM MOO SUNG
-Epitaxial technology of compound semiconductor by MOCVD.KIM MOO SUNG; KIM YOUN; EOM KYUNG SOOK; Kim Seong Il; Min Suk-Ki
-Fabrication of HEMT employing delta-doping layer grown by MOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수
-Fabrication of quantum well high electron mobility transistor grown by MOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh
-Fabrication of quantum well laser diode grown by MOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh
-MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 .Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG
-MOCVD 에 의한 화합물반도체 에피 성장 기술 .Kim Seong Il; Min Suk-Ki; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG
-Modeling for GaAs/AlGaAs buried heterostructure laser diode.Kim Seong Il; EOM KYUNG SOOK; Min Suk-Ki
-Visible AlGaAs DH laser diode grown by MOCVD and computer aided modeling.Kim Seong Il; Min Suk-Ki; EOM KYUNG SOOK; KIM MOO SUNG
1991-01대기압 MOCVD 법을 이용한 AlGaAs/GaAs HEMT 의 제작 .Kim Seong Il; KIM YOUN; EOM KYUNG SOOK; KIM MOO SUNG; Min Suk-Ki
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