| 2010-04-02 | Gain-dependent linewidth enhancement factor in the quantum dot structures | Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il; Kim, Tae Geun |
| 2010-06-28 | High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure | Kim, Kyoung Chan; Han, Il Ki; Lee, Jung Il; Kim, Tae Geun |
| 2009-10-01 | High-Power Single-Mode 1.3-m InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures | Kim, Kyoung Chan; Jang, Dong-Kie; Lee, Jung Il; Kim, Tae Geun; Lee, Woo Won; Kim, Jeong Ho; Yang, Eun Jeong; Koo, Bon Jo; Han, Il Ki |
| 2008-07 | Junction temperature measurement of InAs quanturn-dot laser diodes by utilizing voltage-temperature method | Jeong, Jung Hwa; Kim, Kyoung Chan; Il Lee, Jung; Kim, Hyun Jae; Han, Il Ki |
| 2008-03 | Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes | Kim, Kyoung Chan; Han, Il Ki; Yoo, Young Chae; Lee, Jung Il; Sung, Yun Mo; Kim, Tae Geun |
| 2007-06 | Thermal analysis of InAs quantum dot laser diodes with an additional Au layer on p-metal | Jung, Jung Hwa; Kim, Hyun Jae; Kim, Kyoung Chan; Lee, Jung Il; Han, Il Ki |
