| 2003-07-28 | Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers | Lee, JH; Maikap, S; Kim, DY; Mahapatra, R; Ray, SK; No, YS; Choi, WK |
| 2005-04 | Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates | Maikap, S; Lee, JH; Mahapatra, R; Pal, S; No, YS; Choi, WK; Ray, SK; Kim, DY |
| 2006-02-27 | Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates | Shin, JW; Lee, JY; Kim, TW; No, YS; Cho, WJ; Choi, WK |
| 2004-08 | Low-energy ion beam treatment of alpha-Al2O3(0001) and improvement of photoluminescence of ZnO thin films | Park, JY; No, YS; Park, BJ; Lee, HW; Choi, JW; Kim, JS; Ermakov, Y; Yoon, SJ; Oh, YJ; Choi, WK |
| 2004-01 | Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers | Maikap, S; Lee, JH; Kim, DY; Mahapatra, R; Ray, SK; Song, JH; No, YS; Choi, WK |
| 2004-06-15 | The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al2O3(0001) by plasma assisted molecular beam epitaxy | Jung, YS; No, YS; Kim, JS; Choi, WK |
