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Showing results 1 to 14 of 14

Issue Date	Title	Author(s)
2004-12	Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots	Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A
2022-03	Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications	Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae-Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu-Tae
2021-04-16	Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET	Lee, Kookjin; Kim, Yeonsu; Lee, Hyebin; Park, Sojeong; Lee, Yongwoo; Joo, Min-Kyu; Ji, Hyunjin; Lee, Jaewoo; Chun, Jungu; Sung, Moonsoo; Cho, Young-Hoon; Kim, Doyoon; Choi, Junhee; Lee, Jae Woo; Jeon, Dae-Young; Choi, Sung-Jin; Kim, Gyu-Tae
2007-03	Excess noise in vanadium tungsten oxide bolometric material	Chi-Anh, Nguyen; Moon, Sung
2014-11	Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation	Na, Junhong; Lee, Young Tack; Lim, Jung Ah; Hwang, Do Kyung; Kim, Gyu-Tae; Choi, Won Kook; Song, Yong-Won
2004-12	Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors	Han, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK
-	Generation of interface states due to quantum dot grown in Au/GaAs Schottky diode structures	Choi, Won Jun; Hyoungdo Nam; Lee, Jung Il; YOU, BYUNG YONG; SONG, JIN-DONG; H. Yang; A. Chovet
2008-12	Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots	Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I.
-	Low frequency noise characteristics of GaAs structures with embedded In(Ga)As quantum dots	Lee, Jung Il; YOU, BYUNG YONG; SONG, JIN-DONG; Choi, Won Jun; Nam Hyoung-Do; Chovet, Alain
2005-02	Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy	Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A
2008-04	Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure	Lee, Jungil; Yu, Byung-Yong; Lee, Chul Ho; Yi, Gyu-Chul; Son, Seung Hun; Kim, Gyu-Tae; Ghibaudo, Gerard
2005-01	New model for low-frequency noise in poly-Si resistors	Lee, J; Han, I; Chang, SK; Kim, E; Lee, MB
2008-07	Physical understanding of the Hooge parameter in ZnO nanowire devices	Lee, Jungil; Han, Ilki; Yu, Byung-Yong; Yi, Gyu-Chul; Ghibaudo, Gerard
2020-11-06	Real-time effect of electron beam on MoS(2)field-effect transistors	Lee, Kookjin; Lee, Hyebin; Kim, Yanghee; Choi, Junhee; Ahn, Jae-Pyoung; Shin, Dong Hoon; Cho, Young-Hoon; Jang, Ho-kyun; Lee, Sang Wook; Shin, Jinwoo; Ji, Hyunjin; Kim, Gyu-Tae

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