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Showing results 1 to 30 of 35

Issue DateTitleAuthor(s)
2005-06A Magneto-Optic Waveguide Isolator Using Multimode Interference EffectJ.S.Yang; 변영태; 전영민; 이석; 이우영; 우덕하; 노종욱; 옥성해; T.Mizumoto
1997-03A study on low-temperature bonding of glass-silicon using modified direct bonding method주병권; 고창기; 이윤희; 강인병; Paul White; Noel Samaan; Malcolm Haskard; 오명환
-An assembly and interconnection technology for micromechanical structure using a anisotropic conductive filmI. B. Kang; Ju Byeong Kwon; M. R. Haskard
-An integrated optical waveguide isolator based on multi mode interference by wafer direct bondingRoh Jong Wook; YANG, JEONG SU; Lee, Seok; Woo, Deok Ha; T. mizumoto; W. Y. Lee
-Effect of wet-etching process on the gate insulator of metal tip FEA정유호; Ju Byeong Kwon; Jung Jae Hoon; LEE YUN HI; OH MYUNG HWAN; 김철주
2019-11Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator SubstrateLee, Subin; Kim, Seong Kwang; Han, Jae-Hoon; Song, Jin Dong; Jun, Dong-Hwan; Kim, Sang-Hyeon
2017-09Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off TechniquesKim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon
1994-10Formation of silicon diaphragm using silicon-wafer direct bonding / electrochemical etch-stopping and its application to silicon pressure sensor fabrication주병권; 하병주; 김근섭; 송만호; 김성환; 김철주; 차균현; 오명환
-Glass-to-glass bonding for tubeless packaging of field emission displayJu Byeong Kwon; 최우범; 이덕중; 정지원; 정성재; LEE NAM YANG; 조경익; 유형준; 한정인; OH MYUNG HWAN
2018-05Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge MaterialsKim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; Lim, Hyeong-Rak; Han, Jae-Hoon; Lee, Subin; Kim, Ho-Sung; Bidenko, Pavlo; Kang, Chang-Mo; Lee, Dong-Seon; Song, Jin-Dong; Choi, Won Jun; Kim, Hyung-Jun
2018-11Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive BondingKang, Chang-Mo; Lee, Jun-Yeob; Kong, Duk-Jo; Shim, Jae-Phil; Kim, Sanghyeon; Mun, Seung-Hyun; Choi, Soo-Young; Park, Mun-Do; Kim, James; Lee, Dong-Seon
2019-09Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETsLim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; Kim, Hyung-Jun; Kim, Sanghyeon
2018-05Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As ChannelKim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon
2015-05In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried OxideKim, Sang Hyeon; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun
2016-10Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on SiKim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun
2018-03Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V TemplatesShim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; Kim, Sang-Hyeon
-Modified low-temperature direct bonding method for vacuum microelectronics applicationJu Byeong Kwon; 이덕중; 최우범; 장진; LEE YUN HI; 이광배; OH MYUNG HWAN
-New Vacuum packaging method of field emission displayJu Byeong Kwon; 최우범; S. J. Jeong; LEE NAM YANG; J. I. Han; K. I. Cho; OH MYUNG HWAN
1995-02ON THE ANISOTROPICALLY ETCHED BONDING INTERFACE OF DIRECTLY BONDED (100) SILICON-WAFER PAIRSJU, BK; LEE, YH; TCHAH, KH; OH, MH
2020-04Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs PhotodetectorsKim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon
1997-10Si-Si electrostatic bonding using electron beam-evaporated corning #7740 as an interlayer주병권; 최우범; 이윤희; 정성재; 이남양; 성만영; 오명환
-Silicon to silicon anodic bonding using lithium doped interlayer정지원; Ju Byeong Kwon; 최우범; 정성재; LEE NAM YANG; CHOI DOO JIN; OH MYUNG HWAN
-Status and new evaluation method of interfacial oxide between directly-bonded Si wafer pairsJu Byeong Kwon; LEE YUN HI; OH MYUNG HWAN
-Study on glass-to-silicon anodic bonding using hydrophilic processJu Byeong Kwon; 이덕중; 장진; OH MYUNG HWAN
1994-04Study on the bonding interface in directly-bonded Si-Si and Si-SiO2/Si wafer pairs주병권; 방준호; 이윤희; 박종완; 차균현; 오명환
-The effect of 02 plasma treatment on anodic bondingJu Byeong Kwon; 최승우; 최우범; LEE YUN HI; KIM BYUNG HO; OH MYUNG HWAN
2017-06The third dimension: The logical step for III-Vs김상현; 김성광; 김형준
-Thin body n- and p-GaAs FET on Si for CMOS integrationShim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technologyShim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun
-Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technologyShim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun
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