2002-12 | Single-electron tunneling through a heavily doped GaAs quantum dot | Son, SH; Choi, BH; Cho, KH; Hwang, SW; Park, YM; Park, YJ; Kim, EK; Ahn, D |
2002-06 | Improved crystalline quality of GaN by substrate ion beam pretreatment | Cho, YS; Jhin, J; Koh, EK; Park, YJ; Kim, EK; Kim, G; Min, SK; Byun, D |
2002-06 | Role of insertion layer controlling wavelength in InGaAs quantum dots | Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JY; Lee, C |
2002-06 | Effects of doping profile on characteristics of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Kim, EK; Son, MH; Hwang, SW; Yoo, KH |
2002-04 | Ellipsometric study of quasi-monolayer InAs embedded in GaAs at the threshold of quantum-dot formation | Lee, H; Park, YJ; Kim, EK |
2002-04 | The effect of metallic catalysts on the synthesis of GaN micro-crystals | Roh, CH; Park, YJ; Kim, EK; Shim, KB |
2002-03 | Effects of N+-implanted sapphire (0001) substrate on GaN epilayer | Cho, YS; Koh, EK; Park, YJ; Koh, D; Kim, EK; Moon, Y; Leem, SJ; Kim, G; Byun, D |
2002-02-01 | Electromigration-induced via failure assisted by neighboring clusters | Choi, IS; Park, YJ; Joo, YC |
2002-06 | Implantation of N ions on sapphire substrate for improvement of GaN epilayer | Cho, YS; Jhin, J; Park, YJ; Cho, S; Koh, EK; Kim, EK; Kim, G; Byun, D; Min, SK |
2002-05-31 | Thermal evolution of alpha- and beta-phases in the thin GaN on (001) GaAs | Park, YJ; Koh, EK; Park, CS; Park, IW; Kim, EK |