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Other Titles
Pt/SrBi2Nb2O9/Si 게이트 구조의 전기적 특성에 대한 Bi 함량의 효과
Authors
최훈상조금석Kim Yong Tae이관이종한Kim Seong Il최인훈
Citation
2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Device, pp.229 - 234
Keywords
SBN
URI
https://pubs.kist.re.kr/handle/201004/107496
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KIST Conference Paper > Others
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