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Pt/SrBi2Nb2O9/Si 게이트 구조의 전기적 특성에 대한 Bi 함량의 효과

Authors

최훈상; 조금석; Kim Yong Tae; 이관; 이종한; Kim Seong Il; 최인훈

Issue Date

2001-07

Citation

2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Device, pp.229 - 234

Keywords

SBN

URI

https://pubs.kist.re.kr/handle/201004/107496

Appears in Collections:

KIST Conference Paper > Others

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