Lateral growth rate enhancement on patterned GaAs substrates with CCl//4 by MOCVD.

Authors
KIM YOUNKim Seong Il황성민KIM MOO SUNGMin Suk-Ki
Citation
22nd Institute symp. compound semiconductor, v.no. 145, pp.137 - 142
Keywords
GaAs
URI
https://pubs.kist.re.kr/handle/201004/111962
Appears in Collections:
KIST Conference Paper > Others
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