Carrier lifetime in dielectric cap disordered GaAs/AlGaAs quantum well by SiN capping layer.

Authors
W. J. ChoiLee SeokD. WooLee Jung IlS. K. KimJ. H. ChuS. K. YuKANG KWANG NHAMD. KimK. Cho
Citation
CLEO/QELS '95, Baltimore, USA, pp.?
Keywords
quantum well disordering
URI
https://pubs.kist.re.kr/handle/201004/112004
Appears in Collections:
KIST Conference Paper > Others
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