Atomic engineering of metastable BeO6 octahedra in a rocksalt framework

Authors
Lee, Woo ChulKim, SangtaeLarsen, Eric S.Choi, Jung-HaeBaek, Seung-HyubLee, MinjiCho, Deok-YongLee, Han-KooHwang, Cheol SeongBielawski, Christopher W.Kim, Seong Keun
Issue Date
2020-01-31
Publisher
ELSEVIER
Citation
APPLIED SURFACE SCIENCE, v.501
Abstract
An atomic structure is widely recognized as the key that determines the physical properties of a material. A critical challenge to engineer the atomic structure is that many useful crystals are metastable under ambient conditions and difficult to realize. Here, it is demonstrated that highly metastable atomic arrangements can be synthesized in the isostructural matrix via atomic layer deposition. Studying highly metastable BeO6 octahedra in rocksalt MgO as a model system, it is experimentally and theoretically shown that the single-phase BexMg1-xO thin films adopt rocksalt structure over wurtzite for the composition range x < 0.21. The single-phase rocksalt films exhibit almost doubled dielectric constants with the presence of BeO6 octahedra. Such atomic environment engineering may create intriguing properties that have not been realized in the constituent materials. This work provides excellent opportunities to explore unprecedented materials properties via engineering metastable atomic arrangements using the isostructural matrix approach.
Keywords
HIGH DIELECTRIC-CONSTANT; LAYER DEPOSITION; THIN-FILMS; DIOXIDE; MEMORY; MGO; HIGH DIELECTRIC-CONSTANT; LAYER DEPOSITION; THIN-FILMS; DIOXIDE; MEMORY; MGO; Metastable phase stabilization; Octahedral BeO6; Rocksalt; High-k dielectric; Atomic layer deposition
ISSN
0169-4332
URI
https://pubs.kist.re.kr/handle/201004/119045
DOI
10.1016/j.apsusc.2019.144280
Appears in Collections:
KIST Article > 2020
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