The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film

Abstract

Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 x 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure. (C) 2015 AIP Publishing LLC.