Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors

Authors
Lee, Seung-HwanKim, Hong-KiKang, Min-GyuKang, Chong-YunLee, Sung-GapLee, Young-HieYoon, Jung-Rag
Issue Date
2014-07
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.777 - 779
Abstract
A formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 degrees C-125 degrees C, delta C/C = +/- 30 ppm/degrees C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Omega and 62.39 mu H, respectively. The leakage current density was 0.78 mu A/cm(2) at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.
Keywords
DIELECTRIC-PROPERTIES; FOWLER-NORDHEIM; DIELECTRIC-PROPERTIES; FOWLER-NORDHEIM; CSZT; embedded capacitor; FDE
ISSN
0741-3106
URI
https://pubs.kist.re.kr/handle/201004/126623
DOI
10.1109/LED.2014.2320295
Appears in Collections:
KIST Article > 2014
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