Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors
- Authors
- Lee, Seung-Hwan; Kim, Hong-Ki; Kang, Min-Gyu; Kang, Chong-Yun; Lee, Sung-Gap; Lee, Young-Hie; Yoon, Jung-Rag
- Issue Date
- 2014-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.777 - 779
- Abstract
- A formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 degrees C-125 degrees C, delta C/C = +/- 30 ppm/degrees C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Omega and 62.39 mu H, respectively. The leakage current density was 0.78 mu A/cm(2) at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.
- Keywords
- DIELECTRIC-PROPERTIES; FOWLER-NORDHEIM; DIELECTRIC-PROPERTIES; FOWLER-NORDHEIM; CSZT; embedded capacitor; FDE
- ISSN
- 0741-3106
- URI
- https://pubs.kist.re.kr/handle/201004/126623
- DOI
- 10.1109/LED.2014.2320295
- Appears in Collections:
- KIST Article > 2014
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