Optical anisotropy and diamagnetic energy shifts in InP-GaP lateral quantum wells

Authors
Shin, Y. H.Kim, YongminSong, J. D.Lee, Y. T.Saito, H.Nakamura, D.Matsuda, Y. H.Takeyama, S.
Issue Date
2014-07
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF LUMINESCENCE, v.151, pp.244 - 246
Abstract
Linearly polarized photoluminescence (PL) measurements were made from InP-GaP lateral multiple quantum wells induced by composition modulation along the lateral direction. At B=0, two prominent emission peaks emerged, which are identified as transitions from In-rich well and Ga-rich barrier. regions. Both transitions are strongly linear polarized parallel to the [110] crystal direction. While rotating PL orientation from [110] to [1-10] direction, the well and barrier transitions show red- and blue-shifts, respectively, due to the different valence states. In high magnetic fields, the two peaks exhibit different diamagnetic energy shifts mainly because of the effective-mass difference in the In-rich and Ga-rich alternate regions along the lateral direction. (C) 2014 Elsevier B.V. All rights reserved.
Keywords
MOLECULAR-BEAM EPITAXY; COMPOSITION MODULATION; SUPERLATTICES; ALLOYS; MOLECULAR-BEAM EPITAXY; COMPOSITION MODULATION; SUPERLATTICES; ALLOYS; Lateral composition modulation; InP-GaP short period superlattice; Optical anisotropy; Diamagnetic energy shift
ISSN
0022-2313
URI
https://pubs.kist.re.kr/handle/201004/126632
DOI
10.1016/j.jlumin.2014.02.036
Appears in Collections:
KIST Article > 2014
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