Optical anisotropy and diamagnetic energy shifts in InP-GaP lateral quantum wells
- Authors
- Shin, Y. H.; Kim, Yongmin; Song, J. D.; Lee, Y. T.; Saito, H.; Nakamura, D.; Matsuda, Y. H.; Takeyama, S.
- Issue Date
- 2014-07
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- JOURNAL OF LUMINESCENCE, v.151, pp.244 - 246
- Abstract
- Linearly polarized photoluminescence (PL) measurements were made from InP-GaP lateral multiple quantum wells induced by composition modulation along the lateral direction. At B=0, two prominent emission peaks emerged, which are identified as transitions from In-rich well and Ga-rich barrier. regions. Both transitions are strongly linear polarized parallel to the [110] crystal direction. While rotating PL orientation from [110] to [1-10] direction, the well and barrier transitions show red- and blue-shifts, respectively, due to the different valence states. In high magnetic fields, the two peaks exhibit different diamagnetic energy shifts mainly because of the effective-mass difference in the In-rich and Ga-rich alternate regions along the lateral direction. (C) 2014 Elsevier B.V. All rights reserved.
- Keywords
- MOLECULAR-BEAM EPITAXY; COMPOSITION MODULATION; SUPERLATTICES; ALLOYS; MOLECULAR-BEAM EPITAXY; COMPOSITION MODULATION; SUPERLATTICES; ALLOYS; Lateral composition modulation; InP-GaP short period superlattice; Optical anisotropy; Diamagnetic energy shift
- ISSN
- 0022-2313
- URI
- https://pubs.kist.re.kr/handle/201004/126632
- DOI
- 10.1016/j.jlumin.2014.02.036
- Appears in Collections:
- KIST Article > 2014
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