Microstructural investigation of SexTe100-x thin films deposited on Si(100) substrates by x-ray diffractometer and transmission electron Microscopy analysis

Authors
Kim, Eun TaeLee, Jeong YongKim, Yong Tae
Issue Date
2007-11
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.11, pp.7392 - 7395
Abstract
The microstructural properties of SexTe100-x (x = 16, 29, 38) thin films are investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. SexTe100-x, thin films have a Te hexagonal structure and Te{011} interplanar spacing decreases because some Se atoms occupy Te atomic sites, forming Se helical chains within the Te helical chains. By increasing the Se contents from 16 to 29 at. %, Se5.95Te1.05 monoclinic and Se hexagonal structures coexist in a grain and at 38 at. %, a Se hexagonal structure is observed within the Te hexagonal grain. This means that SexTe100-x thin films maintain the Te hexagonal structure and that phase separation does not occur owing to the short diffusion time.
Keywords
CONDUCTIVITY; ALLOY; SETE; CONDUCTIVITY; ALLOY; SETE; transmission electron microscopy; Se-Te solid solution; Se5.95Te1.05 monoclinic structure
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/134016
DOI
10.1143/JJAP.46.7392
Appears in Collections:
KIST Article > 2007
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