Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O-3-0.9Pb(Zr0.5Ti0.5)O-3 solid solution and thick films for low temperature firing on a Si-substrate

Authors
Kwon, Tae YunPark, Jae HongKim, Yong BumYoon, Dae SungCheon, Chae IlLee, Hong LimKim, Tae Song
Issue Date
2006-10-01
Publisher
ELSEVIER
Citation
JOURNAL OF CRYSTAL GROWTH, v.295, no.2, pp.172 - 178
Abstract
A newly designed lead zirconate titanate (PZT) solid solution 0.1 Pb(Zn0.5W0.5)O-3-0.9Pb(Zr0.5Ti0.5)O-3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 degrees C), was 703.5 and 911.3, respectively. (c) 2006 Elsevier B.V. All rights reserved.
Keywords
LEAD-ZIRCONATE-TITANATE; CERAMICS; SILICON; LEAD-ZIRCONATE-TITANATE; CERAMICS; SILICON; polycrystalline deposition; perovskites; dielectric materials; piezoelectric materials
ISSN
0022-0248
URI
https://pubs.kist.re.kr/handle/201004/135038
DOI
10.1016/j.jcrysgro.2006.07.005
Appears in Collections:
KIST Article > 2006
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