Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O-3-0.9Pb(Zr0.5Ti0.5)O-3 solid solution and thick films for low temperature firing on a Si-substrate
- Authors
- Kwon, Tae Yun; Park, Jae Hong; Kim, Yong Bum; Yoon, Dae Sung; Cheon, Chae Il; Lee, Hong Lim; Kim, Tae Song
- Issue Date
- 2006-10-01
- Publisher
- ELSEVIER
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.295, no.2, pp.172 - 178
- Abstract
- A newly designed lead zirconate titanate (PZT) solid solution 0.1 Pb(Zn0.5W0.5)O-3-0.9Pb(Zr0.5Ti0.5)O-3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 degrees C), was 703.5 and 911.3, respectively. (c) 2006 Elsevier B.V. All rights reserved.
- Keywords
- LEAD-ZIRCONATE-TITANATE; CERAMICS; SILICON; LEAD-ZIRCONATE-TITANATE; CERAMICS; SILICON; polycrystalline deposition; perovskites; dielectric materials; piezoelectric materials
- ISSN
- 0022-0248
- URI
- https://pubs.kist.re.kr/handle/201004/135038
- DOI
- 10.1016/j.jcrysgro.2006.07.005
- Appears in Collections:
- KIST Article > 2006
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