Effect of plasma immersion on crystallinity of V2O5 film grown by dc reactive sputtering at room temperature

Authors
Choi, SHKim, JSYoon, YS
Issue Date
2005-12-22
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.493, no.1-2, pp.1 - 5
Abstract
Vanadium oxide thin films were grown at room temperature by direct current reactive sputtering. To investigate the effect of plasma immersion on the crystallinity of as-grown film, we immersed samples in plasma during the deposition process. X-ray diffraction (XRD) measurements show that as-deposited thin films immersed in plasma are crystalline, whereas those not immersed in the plasma are amorphous. Images taken with scanning electron microscopy show that the surface of films exposed to plasma have a different morphology to the surface of films not exposed to plasma. The Li-intercalation feature of as-deposited films immersed in plasma shows the typical behavior of crystalline vanadium oxide; such behavior is unsuitable for the cathode of thin film batteries (TFBs). These results indicate that direct current plasma promotes the growth of crystalline vanadium oxide films. (c) 2004 Elsevier B.V. All rights reserved.
Keywords
THIN-FILM; SURFACE; THIN-FILM; SURFACE; sputtering; plasma processing and deposition; vanadium oxide; crystallization
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/135877
DOI
10.1016/j.tsf.2004.07.057
Appears in Collections:
KIST Article > 2005
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