Effect of plasma immersion on crystallinity of V2O5 film grown by dc reactive sputtering at room temperature
- Authors
- Choi, SH; Kim, JS; Yoon, YS
- Issue Date
- 2005-12-22
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v.493, no.1-2, pp.1 - 5
- Abstract
- Vanadium oxide thin films were grown at room temperature by direct current reactive sputtering. To investigate the effect of plasma immersion on the crystallinity of as-grown film, we immersed samples in plasma during the deposition process. X-ray diffraction (XRD) measurements show that as-deposited thin films immersed in plasma are crystalline, whereas those not immersed in the plasma are amorphous. Images taken with scanning electron microscopy show that the surface of films exposed to plasma have a different morphology to the surface of films not exposed to plasma. The Li-intercalation feature of as-deposited films immersed in plasma shows the typical behavior of crystalline vanadium oxide; such behavior is unsuitable for the cathode of thin film batteries (TFBs). These results indicate that direct current plasma promotes the growth of crystalline vanadium oxide films. (c) 2004 Elsevier B.V. All rights reserved.
- Keywords
- THIN-FILM; SURFACE; THIN-FILM; SURFACE; sputtering; plasma processing and deposition; vanadium oxide; crystallization
- ISSN
- 0040-6090
- URI
- https://pubs.kist.re.kr/handle/201004/135877
- DOI
- 10.1016/j.tsf.2004.07.057
- Appears in Collections:
- KIST Article > 2005
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