Tunneling magnetoresistance of nano-scale magnetic tunnel junctions

Abstract

Nano-size magnetic tunnel junctions (MTJs) were fabricated by using e-beam lithography and oxidizing the top ferromagnetic (free) layer with inductively coupled plasma while the junction area was covered with PR. A significant improvement in the physical properties of the MTJ has been observed compared to those patterned by conventional methods. The tunnelling magnetoresistance (TMR) was 31% for 140 x 140 nm(2) MTJ at room temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.