Fabrication of AlGaAs/GaAs heteroface solar cells

Authors
Kim, H.-J.Park, Y.K.Kim, S.-I.Kim, E.K.Kim, T.-W.
Issue Date
1999-12
Citation
Journal of the Korean Physical Society, v.34, no.SUPPL. 3, pp.S435 - S438
Abstract
Optimal conditions of the thickness and doping concentration for AlGaAs/GaAs heteroface solar cell were calculated. Our result shows that the dependence of efficiency on the thickness and doping concentration of emitter is higher than that of base. The optimum conditions of the thickness and doping concentration of the emitter are 600 nm and 4.0×10 17 cm -3, respectively. Using the calculated optimum conditions, the solar cells were fabricated by atmospheric pressure metalorganic chemical vapor deposition. The size of the solar cell was 1 cm × 1 cm. When the power of the incident light was 86 mW/cm 2, the measured open-circuit voltage, short-circuit current, and fill factor were 0.79 V, 23.1 mA/cm 2, and 0.64, respectively, and the measured efficiency was 13.7 %.
Keywords
GaAs; heteroface; quantum efficiency; solar cell
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/141827
Appears in Collections:
KIST Article > Others
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