Fabrication of AlGaAs/GaAs heteroface solar cells
- Authors
- Kim, H.-J.; Park, Y.K.; Kim, S.-I.; Kim, E.K.; Kim, T.-W.
- Issue Date
- 1999-12
- Citation
- Journal of the Korean Physical Society, v.34, no.SUPPL. 3, pp.S435 - S438
- Abstract
- Optimal conditions of the thickness and doping concentration for AlGaAs/GaAs heteroface solar cell were calculated. Our result shows that the dependence of efficiency on the thickness and doping concentration of emitter is higher than that of base. The optimum conditions of the thickness and doping concentration of the emitter are 600 nm and 4.0×10 17 cm -3, respectively. Using the calculated optimum conditions, the solar cells were fabricated by atmospheric pressure metalorganic chemical vapor deposition. The size of the solar cell was 1 cm × 1 cm. When the power of the incident light was 86 mW/cm 2, the measured open-circuit voltage, short-circuit current, and fill factor were 0.79 V, 23.1 mA/cm 2, and 0.64, respectively, and the measured efficiency was 13.7 %.
- Keywords
- GaAs; heteroface; quantum efficiency; solar cell
- ISSN
- 0374-4884
- URI
- https://pubs.kist.re.kr/handle/201004/141827
- Appears in Collections:
- KIST Article > Others
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