Relative absorption edges of GaN/InGaN/GaN single quantum wells and InGaN/GaN heterostructures by metalorganic chemical vapor deposition

Other Titles
유기금속화학기상증착법으로 성장된 GaN/InGaN/GaN 단양자 우물층과 InGaN/GaN 이종접합 구조의 광학적 특성
Authors
김제원손창식장영근최인훈박영균김용태O. AmbacherM. Stutzmann
Issue Date
1999-01
Citation
한국재료학회지 = Korean Journal of Materials Research, v.9, no.1, pp.42 - 45
Keywords
GaN
ISSN
1225-0562
URI
https://pubs.kist.re.kr/handle/201004/142519
Appears in Collections:
KIST Article > Others
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