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A study on the surface modification of graphite by CVD SiC : Growth characteristics of SiC in a horizontal CVD reactor

Other Titles

화학증착 탄화규소에 의한 흑연의 표면개질 연구 : 수평형 화학증착반응관에서 탄화규소 성장특성

Authors

김동주; 최두진; 김영욱; 박상환

Issue Date

1995-01

Citation

요업학회지 = Journal of the Korean Ceramic Society, v.32, no.4, pp.419 - 428

Keywords

Silicon carbide; CVD; Depletion effect; Preferred orientation

URI

https://pubs.kist.re.kr/handle/201004/145323

Appears in Collections:

KIST Article > Others

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