A study on silicon/silicon dioxide interface by C-V techniques.

Other Titles
C-V 방법에 의한 Si/SiO//2 계면상태 연구 =
Authors
강광남이정일이명복주병권김형곤오명환
Issue Date
1990-11
Citation
응용물리, v.v. 3, no.no. 4, pp.536 - 541
Keywords
silicon; silicon dioxide interface
URI
https://pubs.kist.re.kr/handle/201004/147028
Appears in Collections:
KIST Article > Others
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