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Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNx capping layer

Authors

Woo, Deok Ha

Issue Date

2000-01-01

Citation

AIP

URI

https://pubs.kist.re.kr/handle/201004/84846

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KIST Conference Paper > 2000

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