Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH3 flow rate for the growth of SiNx capping layer

Authors
Woo, Deok Ha
Issue Date
2000-01-01
Citation
AIP
URI
https://pubs.kist.re.kr/handle/201004/84846
Appears in Collections:
KIST Conference Paper > 2000
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