C-V characteristics of Pt/SrBi2Ta2O9/CeO2/Si structure for non volatile memory devices

Authors
Kim, Yong Tae
Issue Date
1997-07-01
Citation
European Solid State Device Research Conference, pp.756 - 759
URI
https://pubs.kist.re.kr/handle/201004/85510
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE