Impact of Ground Plane Doping on InGaAs-OI MOSFETs

Authors
Kim Seong KwangShim Jae PhilGeum Daemyeong김재원김창주KIM HANSUNGSONG, JIN-DONG최성진김대환Choi, Won JunKim Hyung-jun김동명Sanghyeon Kim
Publisher
2.7 강원 하이원리조트
Citation
한국반도체학술대회
URI
https://pubs.kist.re.kr/handle/201004/87183
Appears in Collections:
KIST Conference Paper > Others
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