Browsing byAuthorKim, Hyung-jun
Showing results 23 to 52 of 62
| Issue Date | Title | Author(s) |
|---|---|---|
| 2015-05-07 | Fermi surface distortion induced by interaction between Rashba and Zeeman effects | Choi, Won Young; Chang, Joonyeon; Kim, Hyung-jun; Lee, Kyung-Jin; Koo, Hyun Cheol |
| 2018-12 | Ferromagnet-Free All-Electric Spin Hall Transistors | Choi, Won Young; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Abbout, Adel; Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Lee, Kyung-Jin; Koo, Hyun Cheol |
| 2019-01 | Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications | Kim, Sanghyeon; Han, Jae-Hoon; Choi, Won Jun; Song, Jin Dong; Kim, Hyung-jun |
| 2014-07 | Gate-Controlled Spin-Orbit Coupling in InAs/InGaAs Quantum Well Structures | Kim, Kyung-Ho; Park, Youn Ho; Koo, Hyun Cheol; Chang, Joonyeon; Kim, Young Keun; Kim, Hyung-jun |
| 2013-10 | Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates | Kim, Kyung-Ho; Um, Doo-Seung; Lee, Hochan; Lim, Seongdong; Chang, Joonyeon; Koo, Hyun Cheol; Oh, Min-Wook; Ko, Hyunhyub; Kim, Hyung-jun |
| 2019-07-03 | Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes | Lee, Youngsu; Um, Doo-Seung; Lim, Seongdong; Lee, Hochan; Kim, Minsoo P.; Yang, Tzu-Yi; Chueh, Yu-Lun; Kim, Hyung-jun; Ko, Hyunhyub |
| 2018-10 | Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs | Kim, SangHyeon; Kim, Seong Kwang; Shin, SangHoon; Han, Jae-Hoom; Grum, Dae-Myeong; Kim, Hyung-jun; Lee, Subin; Kim, Han Sung; Ju, Gunwu; Song, Jin Dong; Alam, Muhammad A.; Shim, Jae-Phil |
| 2017-10 | Heterogeneous Integration toward Monolithic 3D Chip | Kim, SangHyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-myeong; Ju, Gunwu; Kim, Han Sung; Kim, Hyung-jun; Lim, Hyeong Rak; Han, Jae-Hoon; Kang, ChangMo; Lee, Dong Seon; Song, Jin Dong; Choi, Won Jun; LIM, HEE JEONG |
| 2024-04 | High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices | Kang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang-Min; Lee, Nayeong; Lee, Ryong-Gyu; Kim, Gahye; Kim, Seung-Hwan; Kim, Hyung-jun; Yang, Cheol-Woong; Jeon, Jongwook; Kim, Yong-Hoon; Lee, Sungjoo |
| 2019-09-30 | Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode | Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; Kim, Hyung-jun; Kim, Sanghyeon |
| 2023-12 | In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors | Song, Sungjoo; Kim, Seung-Hwan; Han, Kyu-Hyun; Kim, Hyung-jun; Yu, Hyun-Yong |
| 2010-12 | Influence of the Magnetic Field on the Effective Mass and the Rashba effect in an In0.53Ga0.47As Quantum-well Structure | Park, Youn Ho; Koo, Hyun Cheol; Kim, Kyung Ho; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
| 2016-10-05 | InGaAs Nanomembrane/Si van der Waals Heterojunction Photodiodes with Broadband and High Photoresponsivity | Um, Doo-Seung; Lee, Youngsu; Lim, Seongdong; Park, Jonghwa; Yen, Wen-Chun; Chueh, Yu-Lun; Kim, Hyung-jun; Ko, Hyunhyub |
| 2023-01 | Low-temperature laser crystallization of Ge layers grown on MgO substrates | Baek, Jongyeon; Kim Seung-Hwan; Jeong, Heejae; Nguyen, Manh-Cuong; Daeyoon Baek; Baik, Seunghun; Hoang-Thuy Nguyen, An; Baek, Jong-Hwa; Kim, Hyung-jun; Kwon, Hyuk-Jun; Choi, Rino |
| 2012-02 | Magnetic Anisotropy and Morphology of Fe Epitaxial Layers Grown on MgO/InAs Heterostructures | Kim, Kyung-Ho; Kim, Hyung-jun; Ahn, Jae-Pyung; Han, Jun-Hyun; Choi, Jun Woo; Chang, Joonyeon |
| 2020-07-31 | Magnetoresistance of a ferromagnet/semiconductor interface with a strong Rashba effect | Kim, Seong Been; Park, Youn Ho; Kim, Hyung-jun; Chang, Joonyeon; Koo, Hyun Cheol |
| 2010-12 | Manipulation of the Rashba Spin-orbit Interaction in Double-sided doped In0.53Ga047As/InAs Quantum-well Structures | Kim, Kyung Ho; Kim, Hyung-jun; Koo, Hyun Cheol; Han, Suk-hee |
| 2011-07 | Microstructural Changes of Epitaxial Fe/MgO Layers Grown on InAs(001) Substrates | Kim, Kyung-Ho; Kim, Hyung-jun; Ahn, Jae-Pyung; Choi, Jun Woo; Han, Jun Hyun; Tamarany, Rizcky; Lee, Seung-Cheol; Won, Sung Ok; Chang, Joonyeon; Kim, Young Keun |
| 2018-02-21 | Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states | Lee, Joo-hyeon; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Koo, Hyun Cheol; Sayed, Shehrin; Hong, Seokmin; Datta, Supriyo |
| 2012-04-01 | Observation of gate-controlled spin-orbit interaction using a ferromagnetic detector | Park, Youn Ho; Jang, Hyun Cheol; Koo, Hyun Cheol; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin |
| 2010-06 | Observation of Spin-Orbit Interaction Parameter Over a Wide Temperature Range Using Potentiometric Measurement | Park, Youn Ho; Koo, Hyun Cheol; Kim, Kyung Ho; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Kim, Hijung |
| 2016-09-14 | Octopus-Inspired Smart Adhesive Pads for Transfer Printing of Semiconducting Nanomembranes | Lee, Hochan; Um, Doo-Seung; Lee, Youngsu; Lim, Seongdong; Kim, Hyung-jun; Ko, Hyunhyub |
| 2011-05-16 | Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure | Lee, Tae Young; Chang, Joonyeon; Hickey, Mark C.; Koo, Hyun Cheol; Kim, Hyung-jun; Han, Suk Hee; Moodera, Jagadeesh S. |
| 2019-04-15 | Reconfigurable spin logic device using electrochemical potentials | Lee, Joo-hyeon; Hong, Seokmin; Kim, Hyung-jun; Chang, Joonyeon; Koo, Hyun Cheol |
| 2022-04 | Room-Temperature Nonreciprocal Charge Transport in an InAs-Based Rashba Channel | Ahn, Jeong Ung; Han, Ki Hyuk; Kim, Seong Been; Lee, OukJae; Kim, Hyung-jun; Koo, Hyun Cheol |
| 2013-12-16 | Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements | Park, Youn Ho; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Eom, Jonghwa; Choi, Heon-Jin; Koo, Hyun Cheol |
| 2014-03 | Shubnikov-de Haas Oscillation and Potentiometric Methods for Spin-Orbit Interaction Parameter Measurement in an InAs Quantum Well | Kim, Kyung-Ho; Koo, Hyun Cheol; Chang, Joonyeon; Yang, Yun-Suk; Kim, Hyung-jun |
| 2012-08 | Single Crystalline beta-Ag2Te Nanowire as a New Topological Insulator | Lee, Sunghun; In, Juneho; Yoo, Youngdong; Jo, Younghun; Park, Yun Chang; Kim, Hyung-jun; Koo, Hyun Cheol; Kim, Jinhee; Kim, Bongsoo; Wang, Kang L. |
| 2016-11-18 | Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer | Shim, Jae-Phil; Seong, Won-Seok; Min, Jung-Hong; Kong, Duk-Jo; Seo, Dong-Ju; Kim, Hyung-jun; Lee, Dong-Seon |
| 2016-09-19 | Spin accumulation at in-situ grown Fe/GaAs(100) Schottky barriers measured using the three- and four-terminal methods | Nam, Song Hyeon; Park, Tae-Eon; Park, Youn Ho; Ihm, Hae-In; Koo, Hyun Cheol; Kim, Hyung-jun; Han, Suk Hee; Chang, Joonyeon |
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