| - | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n- doping on InSb/GaAs | SONG, JIN-DONG; Kim Hyung-jun; Shin Sang Hoon; Su youn, Kim |
| - | High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
| - | Impact of Ground Plane Doping on InGaAs-OI MOSFETs | Kim Seong Kwang; Shim Jae Phil; Geum Daemyeong; 김재원; 김창주; KIM HANSUNG; SONG, JIN-DONG; 최성진; 김대환; Choi, Won Jun; Kim Hyung-jun; 김동명; Sanghyeon Kim |
| - | Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment | Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Shim Jae Phil; Subin Lee; Kim Hyung-jun; Byeong-Kwon Ju; Sanghyeon Kim |
| - | In-Plane Magnetic Anisotropy Dependence of MgO Growth temperature in Fe/MgO on InAs(001) Substrates | 김경호; Kim Hyung-jun; shin il jae; Han, Suk Hee |
| - | InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor | SONG, JIN-DONG; Kim Hyung-jun; Lim Ju-Young; Shin Sang Hoon; 김경호; Chang, Joonyeon |
| - | InAs 2DEG HEMT on GaAs and InP with Sb- and P- cluster MBE for SPIN-FET and InSb on GaAs for magnetic sensor | SONG, JIN-DONG; Kim Hyung-jun; Lim Ju-Young; Shin Sang Hoon; 김경호; Chang, Joonyeon; SW LEE |
| - | Influence of the magnetic field on effective mass and Rashba effect in an In0.53Ga0.47As quantum well structure | Park Youn-Ho; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee |
| - | Influence of the magnetic field on Rashba effect in an In0.53Ga0.47As quantum well structure | Park Youn-Ho; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Han, Suk Hee |
| 2007-12 | Lateral Arrangement of Ge self-assembled quantum dots on a partially relaxed SixGe1-x buffer layer | Kim Hyung-jun; Ya-Hong Xie; Kang Wang |
| - | Magnetic anisotropy in epitaxial Cobalt film on GaAs(100) substrate | 김경호; Kim Hyung-jun; 김영근; Han, Suk Hee |
| - | Magnetic anisotropy of Fe thin films on vicinal Si(111) substrate | Jeong Hong Jo; Hee Kyung Kang; Kim Hyung-jun; Chang, Joonyeon; Sang Ho Lim |
| - | Manipulation of electric field induced spin-orbit interaction parameter in double-sided doped InAs and In0.53Ga0.47As quantum well structures | 김경호; Kim Hyung-jun; Park Youn-Ho; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| - | Microstructural changes of epitaxial Fe/MgO layers grown on InxGa1-xAs substrates | Kim Kyung-Ho; Kim Hyung-jun; Kim Young Keun; Chang, Joonyeon |
| - | Microstructural evolution of epitaxial Fe/MgO layers grown on InAs(001) substrates | Kim Kyung-Ho; Kim Hyung-jun; Ahn, Jae Pyoung; shin il jae; Chang, Joonyeon; 김영근 |
| - | Microstructure and magnetic properties of epitaxial Fe grown on MgO/InAs (001) substrates | Kim Kyung-Ho; Kim Hyung-jun; Kim Young Keun; Chang, Joonyeon |
| - | Microstructure and magnetic property of Fe/MgO layer on GaAs and InAs (001) substrates | Kim Kyung-Ho; Kim Hyung-jun; Jun Woo Choi; Chang, Joonyeon; 김영근 |
| - | Microstructure of the Strain-induced Fe/MgO/InxGa1-xAs Heterostructure for Spin injection | Kim Kyung Ho; Kim Hyung-jun; shin il jae; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| - | New technique of measuring a spin polarization in patterned device by using scanning point contact Andreev reflection method | 김경호; Lee Suyoun; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
| - | Observation of bi-layered MgO growth in Fe/MgO/GaAs heterostructure | Kim Kyung-Ho; Kim Hyung-jun; Ahn, Jae Pyoung; Won, Sung Ok; shin il jae; Chang, Joonyeon; 김영근 |
| - | Observation of Microstructural Evolutions of Epitaxial Fe/MgO Layers Grown on InxGa1-xAs Substrates | Kim Kyung-Ho; Kim Hyung-jun; Ahn, Jae Pyoung; shin il jae; Chang, Joonyeon |
| - | Observation of spin-orbit interaction parameter over a wide temperature range using potentiometric measurement | Park Youn-Ho; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Kim, Hi Jung |
| - | Parametric growth of InAlSb meta-morphic buffer layers on GaAs for the application to InSb-based electronic devices | Shin Sang Hoon; SONG, JIN-DONG; Su youn, Kim; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee; T G KIM |
| - | Quantum-well thickness dependence on the spin-orbit interaction parameter in inserted InAs heterostructure | Lee, Tae-young; 김경호; Chang, Joonyeon; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
| 2008-01 | Si-SiGe LED | Kim Hyung-jun; Kang Wang; Song Tong |
| - | Spatial dependence of magnitude of the spin signal on the InAs quantum well structure | Lee, Tae-young; 김경호; Chang, Joonyeon; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee |
| - | Spin Hall Effect Induced by Pd/CoFe Multilayer in a semiconductor channel | 마진석; Koo, Hyun Cheol; Eom Jonghwa; Chang, Joonyeon; Kim Hyung-jun; Han, Suk Hee; 김철우 |
| - | Spin injection in an epitaxially grown Fe/GaAs hybrid structure | Lee Tae-hwan; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Han, Suk Hee; 임상호 |
| - | Spin Interaction Effect on Potentiometric Measurements in a Quantum Well Channel | Park Youn-Ho; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Han, Suk Hee |
| - | Spin transport in transferred In0.53Ga0.47As channels onto Si substrates | YunSuk Yang; 고현협; Koo, Hyun Cheol; Chang, Joonyeon; Kim Hyung-jun |
